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Although VO2 systems are widely used throughout neuromorphic computing due to their excitatory behaviors, La0.7Sr0.3MnO3 (LSMO) devices have received less attention. Unlike the VO2 system, LSMO undergoes a transition from a low-temperature metal to a high-temperature insulator. As laid out in Chap. 4 , dark-field X-ray microscopy (DFXM) can be applied to thin films if the signal is sufficiently strong. As LSMO contains high-Z elements, thinner films than those studied in Chap. 4 can be studied. This chapter presents the results of both the \(\mu \) XRD and DFXM experiments on barrier-forming devices and the implications of these results for device construction.

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Barriers

  • 章节

  • 发表日期：

    2026年

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  • Elliot Kisiel

摘要

Although VO2 systems are widely used throughout neuromorphic computing due to their excitatory behaviors, La0.7Sr0.3MnO3 (LSMO) devices have received less attention. Unlike the VO2 system, LSMO undergoes a transition from a low-temperature metal to a high-temperature insulator. As laid out in Chap. 4 , dark-field X-ray microscopy (DFXM) can be applied to thin films if the signal is sufficiently strong. As LSMO contains high-Z elements, thinner films than those studied in Chap. 4 can be studied. This chapter presents the results of both the \(\mu \) XRD and DFXM experiments on barrier-forming devices and the implications of these results for device construction.