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This paper presents a comprehensive analytical model for Gate Stack Gate All Around (GS-GAA) MOSFETs, focusing on the subthreshold current and surface potential characteristics. In the proposed model, an n-channel GS-GAA MOSFET employs silver ( \(\boldsymbol{A_g}\) ) as the gate metal, while a p-channel variant uses palladium ( \(\boldsymbol{P_d}\) ). The silver ( \(\boldsymbol{A_g}\) ) gate metal is used with an n-channel GS-GAA MOSFET and palladium ( \(\boldsymbol{P_d}\) ) gate metal for a p-channel GS-GAA MOSFET to detect oxygen and hydrogen, respectively. When gas molecules interact with the surface of the catalytic metal gate, it alters the gate’s work function. This change is observed as gas detection. The presence of high dielectric material as gate oxide mitigates the leakage current. Further, a comparison for this detection has been carried out for multiple devices. The proposed MOSFET exhibits 31.1% higher sensitivity compared to the GAA MOSFET, making it an excellent sensor for gas detection. The analytical results closely match the simulated results. The simulation analysis has been carried out using TCAD Silvaco software.

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Simulation and Analytical Model of Gate Stack Gate All Around MOSFET as Gas Sensor

  • 会议论文

  • 发表日期：

    2026年

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  • Neetu Gupta,
  • Neeraj Gupta,
  • Rashmi Gupta,
  • S. B. Gupta,
  • Prashant Kumar,
  • Lalit Rai,
  • Sandeep Kumar

摘要

This paper presents a comprehensive analytical model for Gate Stack Gate All Around (GS-GAA) MOSFETs, focusing on the subthreshold current and surface potential characteristics. In the proposed model, an n-channel GS-GAA MOSFET employs silver ( \(\boldsymbol{A_g}\) ) as the gate metal, while a p-channel variant uses palladium ( \(\boldsymbol{P_d}\) ). The silver ( \(\boldsymbol{A_g}\) ) gate metal is used with an n-channel GS-GAA MOSFET and palladium ( \(\boldsymbol{P_d}\) ) gate metal for a p-channel GS-GAA MOSFET to detect oxygen and hydrogen, respectively. When gas molecules interact with the surface of the catalytic metal gate, it alters the gate’s work function. This change is observed as gas detection. The presence of high dielectric material as gate oxide mitigates the leakage current. Further, a comparison for this detection has been carried out for multiple devices. The proposed MOSFET exhibits 31.1% higher sensitivity compared to the GAA MOSFET, making it an excellent sensor for gas detection. The analytical results closely match the simulated results. The simulation analysis has been carried out using TCAD Silvaco software.