In this work the temperature dependence of primary performance parameters of nanoscale recessed channel double gate junctionless transistor has been investigated. The performance comparison has been done with conventional double gate junctionless transistor while varying the temperature from 273 K−450 K. Changes in the factors such as threshold voltage, ON and OFF state current, and subthreshold swing is noticed. The zero temperature co-efficient has been observed in transfer characteristics at 0.8 V and 0.6 V for the recessed channel double gate junctionless transistor and conventional counterpart, respectively. It has been observed that the recessed channel junctionless transistor reflects smaller variations in threshold voltage with a slope of −1.09mV/K, ON current of 12.58% and subthreshold swing 39.9 mV/dec in said temperature range in comparison to the conventional junctional device. Moreover, the device OFF state behavior has been found more prone to temperature variations.