The crystallization and properties of silicon carbide crystals have been extensively studied because as a wide bandgap semiconductor, silicon carbide is ideal for electric and electronic applications requiring high temperature, high frequency, and high power. The electrical and electronic properties as well as device applications of bulk silicon carbide have been discussed in several books (Harris in Properties of silicon carbide. INSPEC, London, 1995 [1]; Saddow and Agarwal in Advances in silicon carbide processing and applications. Artech House, Norwood, 2004 [2]; Shur et al. in SiC materials and devices (volumes 1 and 2). World Scientific, Singapore, 2006/2007 [3]). This chapter provides a self-contained up to date framework to facilitate understanding of the properties of silicon carbide nanostructures. The various basic characteristics of silicon carbide crystals including updated advances are reviewed and discussed.