The flexibility of ion implantation in the selection of dopant species, energy, dose, tilt angle, wafer repositioning, and substrate temperature results in this technique being used almost exclusively for doping applications in silicon. In addition to basic planar CMOS devices, this flexibility is exploited in the manufacture of FinFETs, flash memory, DRAMDRAM devices, CMOS image sensors, and BiCMOS devices. This chapter describes the uses of ion implantation that are unique to each of these devices.