Influences of Titanium Dioxide/Silicon Dioxide/Alumina TiO2/SiO2/Al2O3 Thin Film Thickness on Structural and Absorbance Characteristics of Silicon Nitride Layer
摘要
Research aims to fabricate a multilayer thin film for solar cell applications. The SiNx layer (100 nm) is featured with a 60 nm thickness of titanium dioxide (TiO2), silicon dioxide (SiO2) and alumina (Al2O3) and combinations of TiO2/SiO2/Al2O3 nano thin film made via sol–gel processing with the precursor of Ti(IV) isopropoxide for TiO2, TEOS (tetraethyl orthosilicate) for SiO2, and aluminium isopropoxide for Al2O3. The effect of thin film coating on microstructural, absorbance, refractive index, and photocurrent density of SiNx layers are investigated, and hybrid SiNx layer with TiO2/SiO2/Al2O3 nano thin film outcome results are compared with SiNx layer with and without TiO2, SiO2, Al2O3 thin film. An effective processing found enhanced interface strength between the layers and particles are uniformly dispersed. The hybrid SiNx layer featured with 20:20:20 nm of TiO2/SiO2/Al2O3 nano thin film is found to have enhanced absorbance behaviour (0.7), better refractive index (2), and enhanced photocurrent density of 35 mA/cm2.