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Atomic force microscopy (AFM) lithography is a highly precise nanofabrication technique essential for silicon nanowire transistor (SiNWT) development. The programming strategies used in AFM lithography directly impact mask oxidation, influencing the overall performance and reliability of SiNWTs. This study explores how different AFM programming sequences affect oxidation by optimizing key parameters such as tip bias voltage, scan speed, and environmental conditions. The findings demonstrate that well-controlled programming strategies improve oxidation uniformity and pattern fidelity, leading to enhanced SiNWT functionality. Additionally, this study provides insights into oxidation kinetics influenced by AFM parameters, contributing to better control over nanoscale patterning. By refining AFM lithography techniques, semiconductor device fabrication can achieve higher precision, reproducibility, and efficiency. These results highlight the repeatability and reproducibility of the SiNWT device fabrication to enhance the potential of AFM lithography in advancing next-generation nanoelectronic devices in fabrication processes.

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Programming Strategies in AFM Lithography: Effects on Mask Oxidation in Silicon Nanowire Transistor Fabrication

  • 章节

  • 发表日期：

    2026年

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  • Ahmad Makarimi Abdullah,
  • Khatijah Aisha Yaacob,
  • Mohd Azraei Mohd Azmi,
  • Asrulnizam Abd Manaf

摘要

Atomic force microscopy (AFM) lithography is a highly precise nanofabrication technique essential for silicon nanowire transistor (SiNWT) development. The programming strategies used in AFM lithography directly impact mask oxidation, influencing the overall performance and reliability of SiNWTs. This study explores how different AFM programming sequences affect oxidation by optimizing key parameters such as tip bias voltage, scan speed, and environmental conditions. The findings demonstrate that well-controlled programming strategies improve oxidation uniformity and pattern fidelity, leading to enhanced SiNWT functionality. Additionally, this study provides insights into oxidation kinetics influenced by AFM parameters, contributing to better control over nanoscale patterning. By refining AFM lithography techniques, semiconductor device fabrication can achieve higher precision, reproducibility, and efficiency. These results highlight the repeatability and reproducibility of the SiNWT device fabrication to enhance the potential of AFM lithography in advancing next-generation nanoelectronic devices in fabrication processes.