A theory has been developed for current oscillations in double-valley semiconductors of the GaAs type depending on the direction of the electric and magnetic fields. Analytical expressions for the frequency of oscillation and the increment of current oscillation are obtained. The time of transition from the lower valley to the upper and the time of the reverse transition are taken into account. Analytical formulas for the frequency and increment of current oscillations are obtained and correspond to Gunn's experimental data in two-valley semiconductors of the GaAs type.

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The Influence of the Orientation of Electric and Magnetic Fields on Current Fluctuations

  • Eldar Hasanov,
  • Shahla Khalilova,
  • Ruhiyya Mustafayeva

摘要

A theory has been developed for current oscillations in double-valley semiconductors of the GaAs type depending on the direction of the electric and magnetic fields. Analytical expressions for the frequency of oscillation and the increment of current oscillation are obtained. The time of transition from the lower valley to the upper and the time of the reverse transition are taken into account. Analytical formulas for the frequency and increment of current oscillations are obtained and correspond to Gunn's experimental data in two-valley semiconductors of the GaAs type.