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In the present chapter, we solve the coupled Schrödinger-Poisson equation for a system consisting of three coupled quantum wells with an n-type \(\delta \) -layer, subjected to an external electric field along the z-direction. The equation is solved using the FEniCS Project within the effective mass approximation. The transition energy of the first five states shows a dependence on the electric field, which affects the absorption coefficient position and amplitude, both of which are related to the position of the \(\delta \) -layer. These findings have potential applications in transistors and solar cells, where the tuning of electronic and optical properties is crucial for device performance.

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Absorption Coefficient of a Delta-Doped Layer Inside Three Quantum Wells Subjected to an Electric Field

  • 章节

  • 发表日期：

    2026年

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  • M. Jaouane,
  • A. Ed-Dahmouny,
  • A. Fakkahi,
  • R. Arraoui,
  • K. El-Bakkari,
  • H. Azmi,
  • H. El Ghazi,
  • A. Sali,
  • C. A. Duque

摘要

In the present chapter, we solve the coupled Schrödinger-Poisson equation for a system consisting of three coupled quantum wells with an n-type \(\delta \) -layer, subjected to an external electric field along the z-direction. The equation is solved using the FEniCS Project within the effective mass approximation. The transition energy of the first five states shows a dependence on the electric field, which affects the absorption coefficient position and amplitude, both of which are related to the position of the \(\delta \) -layer. These findings have potential applications in transistors and solar cells, where the tuning of electronic and optical properties is crucial for device performance.