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This study examines the current characteristics of CMOS inverters under varying transistor widths and temperatures, utilizing Cadence Virtuoso for simulation. Transistor widths ranged from 120 to 520 nm, while temperatures varied from 27 to 100 °C. Results indicate that increasing the NMOS width raises the current from 8.16 to 12.36 µA, while the PMOS current grows more significantly from 7.37 to 19.82 µA. Wider transistors demonstrate improved current drive capabilities. Conversely, higher temperatures lead to a decline in current; at 120 nm width, current drops from 9.15 µA at 27 °C to 7.8 µA at 100 °C, and at 520 nm width, from 36.64 to 31.20 µA. These findings underscore the crucial influence of thermal and dimensional factors on device performance, offering valuable insights for the design and optimization of future integrated circuits.

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Investigation of Potential Impact on Drain Current of CMOS Inverter with Various Transistor Width and Temperature

  • 会议论文

  • 发表日期：

    2026年

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  • Biswazit Mistry,
  • Suman Chowdhury

摘要

This study examines the current characteristics of CMOS inverters under varying transistor widths and temperatures, utilizing Cadence Virtuoso for simulation. Transistor widths ranged from 120 to 520 nm, while temperatures varied from 27 to 100 °C. Results indicate that increasing the NMOS width raises the current from 8.16 to 12.36 µA, while the PMOS current grows more significantly from 7.37 to 19.82 µA. Wider transistors demonstrate improved current drive capabilities. Conversely, higher temperatures lead to a decline in current; at 120 nm width, current drops from 9.15 µA at 27 °C to 7.8 µA at 100 °C, and at 520 nm width, from 36.64 to 31.20 µA. These findings underscore the crucial influence of thermal and dimensional factors on device performance, offering valuable insights for the design and optimization of future integrated circuits.