This chapter presents the evolution of lithography. It begins with the fundamentals of lithography, and introduces the critical material, photoresist. Two key equations related to critical dimension (CD) and depth of focus (DoF) are discussed, providing a foundation for understanding resolution limits. Techniques to enhance resolution by optimizing the process factor \(k_1\) , known collectively as resolution enhancement techniques (RET), are introduced. Immersion lithography is then explored as a visionary innovation that increased numerical aperture (NA) and extended Moore’s Law. Multiple patterning techniques enable further CD reduction. Aspects of EUV lithography are introduced, including its light source, mask design, high-NA systems. It concludes with the concept of the “lithography galaxy,” which illustrates the compromise between EUV and DUV multi-patterning. The cover image of this chapter is the ASML NXE:3400 system that supportted EUV volume production at the 7 and 5 nm nodes from 2018. Image source: ©ASML Media Library.