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This paper presents the design of a 3.5 GHz common-source GaAs FET low-noise amplifier (LNA) optimized for minimal noise and high gain. The LNA employs a Pi-Shaped Matching and utilizes the S8834 GaAs FET transistor, achieving a gain of 16.686 dB and a noise figure of 1.481 dB, ensuring effective signal amplification with minimal loss. The design demonstrates excellent impedance matching, with S11 = −59.175 dB and S22 = −38.062 dB, ensuring efficient power transfer. Simulated using ADS 2009, the proposed LNA exhibits stability and reliability at the target frequency. Its superior noise performance and impedance matching make it well-suited for IoT and communication systems, particularly in RF and microwave applications requiring high sensitivity and minimal signal degradation.

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Design of a Low-Noise Amplifier at 3.5 GHz Using a Pi-Shaped Matching Network for 5G Communication

  • 会议论文

  • 发表日期：

    2026年

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  • Samia Zarrik,
  • Abdelhak Bendali,
  • Sanae Habibi,
  • Karima Benkhadda,
  • Fatehi ALtalqi,
  • Abderrahim Haddad,
  • Mohamed Habibi,
  • Abdelkader Hadjoudja

摘要

This paper presents the design of a 3.5 GHz common-source GaAs FET low-noise amplifier (LNA) optimized for minimal noise and high gain. The LNA employs a Pi-Shaped Matching and utilizes the S8834 GaAs FET transistor, achieving a gain of 16.686 dB and a noise figure of 1.481 dB, ensuring effective signal amplification with minimal loss. The design demonstrates excellent impedance matching, with S11 = −59.175 dB and S22 = −38.062 dB, ensuring efficient power transfer. Simulated using ADS 2009, the proposed LNA exhibits stability and reliability at the target frequency. Its superior noise performance and impedance matching make it well-suited for IoT and communication systems, particularly in RF and microwave applications requiring high sensitivity and minimal signal degradation.