Single-crystal films of the Si1−xGex(0 < x < 1) solid solution were grown on \({\text{Si}}\left\langle {111} \right\rangle\) substrates from a tin solution-melt at the crystallization onset temperature range of Toc = 1050 °С/800 °C by the liquid-phase epitaxy method. Optimum technological growth modes for obtaining crystalline perfect epitaxial layers and structures are presented. The cooling rate and the temperature range of growth were 1 °C/min and 900 °С–800 °С, respectively. At the growth rate f1 = 0.345 µm/min. peeling of epitaxial layers of the Si1−xGex solid solution (x = 0.37) was observed. It was found that the stress between the epilayers due to differences in the lattice parameters, the coefficient of thermal expansion (CTE) and the final stress of the interface after relaxation were σΔа = 0.1635 GPa, σΔα = 0.0091 GPa, σΔs = 0.1544 GPa, respectively. The pSi-nSi1−xGex structure covered a wide spectrum of photosensitivity in the range from 0.67 to 1.66 eV at a temperature of 300 K.