A new topology for high step-up nonisolated DC-DC converter using Silicon and Silicon Carbide power devices for solar applications using LTspice Software is presented in this paper. Presently, converters, inverters, and other systems based on power semiconductor devices are used in every electric system virtually. In the last few decades, highly efficient power semiconductor devices have demonstrated a tremendous applicability in converters, resulting in improved efficiency, low weight, and compact size of system. At voltages as high as 600 V, silicon metal oxide semiconductor field effect transistors, or MOSFETs, are commonly utilized. However, because of intrinsic material properties, Si devices are less competitive for applications that requires high voltage block capability, higher operating temperature, large current carrying capability, less static and dynamic losses and low switching losses. When utilizing a DC-DC converter for high frequency and high voltage applications, it is advised to use silicon carbide devices. The enormous advantages of SiC devices, though, have not yet been properly investigated by the researchers. This paper compares Si and SiC based MOSFETS devicebased converter for 50 kHz switching frequency. From the simulated results it has been validated that SiC based converter can provide better efficiency because of lesser conduction losses and switching losses and can operate at much reduced voltage stress than Si based converter.