The pseudo-resistor is a device that simulates the response of a resistor, and it can be implemented using a MOSFET in a specific terminal configuration. It allows for controlling its high resistance by applying an electrical signal to its terminals. This applied current and voltage level is extremely low, causing it to operate in the sub-threshold region of the transistor. This enables its implementation in low-power and low-voltage devices. The pseudo-resistor was studied, considering its behavior under temperature variations and exposure to ionizing radiation, in this case, it was analyzed the total ionizing dose (TID) phenomenon. Therefore, it could be observed that the device exhibits different resistance values to different temperatures, requiring lower voltage for polarization at higher temperatures. Regarding exposure to ionizing radiation, the resistance did not show significant variations. After annealing at room temperature, the equivalent resistance of the pseudo-resistor recovered over time, tending to return to its original value.