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The theory of excitonic quasimolecules (formed from spatially separated electrons and holes) in a nanosystem consisting of double quantum dots of germanium synthesized in a silicon matrix is presented. It is shown that the binding energy of the singlet ground state of the quasimolecule of an exciton is considerably larger than the binding energy of biexciton in a silicon single crystal by almost two orders of magnitude.

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Binding Energy of an Exciton Quasimolecule from Ge/Si Double Quantum Dots: Theory

  • 会议论文

  • 发表日期：

    2025年

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  • Serhii I. Pokutnii,
  • Taras Yu. Gromovy,
  • Valeriia M. Ovdenko

摘要

The theory of excitonic quasimolecules (formed from spatially separated electrons and holes) in a nanosystem consisting of double quantum dots of germanium synthesized in a silicon matrix is presented. It is shown that the binding energy of the singlet ground state of the quasimolecule of an exciton is considerably larger than the binding energy of biexciton in a silicon single crystal by almost two orders of magnitude.