In this paper, we review and evaluate the performance of two non-volatile static random-access memory (NVSRAM) architectures that incorporate memristors to retain data in the absence of power. The two designs, namely 7T2M (7 transistors and 2 memristors) and 8T3M (8 transistors and 3 memristors), leverage memristor-based elements to enhance data retention and stability during read and write operations. Extensive simulations conducted in Cadence Virtuoso reveal that power consumption in both designs increases with temperature in the range of 250 K to 450 K, and is higher than that of conventional static RAM (SRAM). The 7T2M design demonstrates a 9.3% improvement in data recovery speed, while the 8T3M architecture achieves marginally faster write performance. Overall, the results indicate that both 7T2M and 8T3M NVSRAMs hold strong potential for energy-efficient, high-performance memory applications.