Metal Oxide Semiconductor Field Effect Transistor
摘要
This chapter investigates the basic properties, structure and operation of the silicon metal oxide semiconductor field effect transistor (MOSFET) that is the building block of all existing digital electronics circuits. The discussion starts with the original long channel MOSFET model, includes complimentary metal oxide semiconductor field effect (CMOS) transistors and state-of-art sub-micron gate length MOSFET models as in the BSIM model.