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This chapter examines in detail the properties (crystalline, electrical and physical) of gallium nitride (GaN), which have made GaN the material of choice for fabricating ultra high frequency (100 s of MegaHertz–10 s of GigaHertz) and ultra high power (10 s of Amperes and 100 s of Volts) transistors that are essential for a critical applications, especially state-of-art wireless communication systems, charging of electric vehicle batteries etc.

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Gallium Nitride—The Reigning King of Ultra High Frequency|Power Transistors

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  • 发表日期：

    2026年

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  • Amal Banerjee

摘要

This chapter examines in detail the properties (crystalline, electrical and physical) of gallium nitride (GaN), which have made GaN the material of choice for fabricating ultra high frequency (100 s of MegaHertz–10 s of GigaHertz) and ultra high power (10 s of Amperes and 100 s of Volts) transistors that are essential for a critical applications, especially state-of-art wireless communication systems, charging of electric vehicle batteries etc.