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As the physical dimensions (and internal physical sizes) of semiconductor devices decrease (at present approaching atomic scales) the cost of manufacturing such devices is increasing exponentially. This trend is irreversible as a semiconductor device with smaller dimensions has enhanced performance characteristics compared to a larger sized device. Therefore, even before a prototype device could be fabricated, device engineers need to estimate and understand internal electrical properties (potential, electric field, electron|hole current density, charge carrier distribution under typical device biasing conditions etc.,) of the proposed device. A Technology Computer Aided Design (TCAD) tool comes to the rescue of the semiconductor device engineer. The second section of this chapter lists the inhouse measured DC performance characteristics of some commercially available high electron mobility transistor (HEMT)s.

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DeviceMaker—The In-House Developed TCAD Tool to Analyse and Estimate Semiconductor Device Internal Electrical Properties, and Measured DC Performance Characteristics of Commercially Available RF|Microwave and High Power Transistors

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  • 发表日期：

    2026年

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  • Amal Banerjee

摘要

As the physical dimensions (and internal physical sizes) of semiconductor devices decrease (at present approaching atomic scales) the cost of manufacturing such devices is increasing exponentially. This trend is irreversible as a semiconductor device with smaller dimensions has enhanced performance characteristics compared to a larger sized device. Therefore, even before a prototype device could be fabricated, device engineers need to estimate and understand internal electrical properties (potential, electric field, electron|hole current density, charge carrier distribution under typical device biasing conditions etc.,) of the proposed device. A Technology Computer Aided Design (TCAD) tool comes to the rescue of the semiconductor device engineer. The second section of this chapter lists the inhouse measured DC performance characteristics of some commercially available high electron mobility transistor (HEMT)s.