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The paper describes the selection of semiconductors for the inverter of a Phase-Shifted Full-Bridge (PSFB) converter and compares three technologies, Si, SiC and GaN. The comparison is based on the zero-voltage switching (ZVS) capabilities of the converter. The results are supported by simulation in the program Plecs.

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Semiconductor Selection for High-Efficiency PSFB Converter

  • 会议论文

  • 发表日期：

    2025年

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  • Daniel Gordan,
  • Marek Pastor,
  • Tomáš Basarik,
  • Tadeáš Kmecik

摘要

The paper describes the selection of semiconductors for the inverter of a Phase-Shifted Full-Bridge (PSFB) converter and compares three technologies, Si, SiC and GaN. The comparison is based on the zero-voltage switching (ZVS) capabilities of the converter. The results are supported by simulation in the program Plecs.