Design of an Active CMOS Low Pass Filter for IoT-RFID Devices
摘要
Radio frequency identification (RFID) technology is adopted to automate data collecting while providing items with a unique identity, similar to wireless sensor network (WSN) technologies, which can drastically reduce human involvements and mistakes. As a result, it has recently been increasingly common to see RFID technology being deployed and used in multifaceted household and industrial applications. A low pass filter (LPF) circuit is crucial in internet of things (IoT) radio frequency identification (RFID) devices, especially in its transceiver module, for suppressing undesirable high-frequency signals and disturbances. The performance of the LPF circuit has a significant impact on the transceiver’s overall performance. Modern devices mostly adopt passive LPFs, however, this makes the device greatly suffer from a number of issues, including poor quality factor, lack of tuning capabilities, undesirable harmonic interferences and large die size because of bulky on-chip inductors and capacitors. On the other hand, active low-pass filters can overcome these constraints to some extent. In this article, an ideal operational amplifier (op-amp) accompanied by a third order resistor-capacitor (RC) network based active LPF design is proposed using 0.13 µm complementary metal oxide semiconductor (CMOS) technology. According to the simulation results, the suggested active low pass filter has a noise figure of 9.85 dB and a gain of 0 dB with a 350 kHz bandwidth. For smooth functioning, the developed circuit requires a 1.2 V DC supply and consumes 0.68 mW of power for its operation. The proposed op-amp and LPF have tiny core sizes of 0.0012 mm2 and 0.013 mm2, respectively. As a result, the proposed LPF is appropriate for applications involving small, contemporary transceivers.