Magnetodielectric (MD) and multiferroics materials have gained significant attention due to their potential for various technological applications. In multiferroics materials at least two primary ferroic orders, such as ferromagnetism, ferroelectricity, and ferroelasticity coexist within a single-phase compound. However, in MD materials one of the electric properties such as dielectric constant can be tuned with the application of magnetic field. Single-phase multiferroic and magnetodielectric materials are rare at room temperature (RT). Among the promising materials, perovskite oxides, especially rare earth manganite’s (RMnO3), orthoferrites (RFeO3), rare earth orthochromites (RCrO3) and AFeO3 (A = Ga, Bi, Al), have been extensively investigated for their MD and multiferroic properties. In these materials, magnetic transition temperature can be tuned to RT by doping and the presence of complex magnetic interactions in these materials can induce ferroelectricity below the magnetic transition temperature through magnetic interactions. Therefore, it might be possible to control the spins orientations by a very small magnetic field, which paves a new way to the design RT spintronic devices. This abstract highlights the new type of multiferroic and magneto-dielectric materials and their role in the future device scalability and multifunctionality in next-generation electronic systems.