Design of RAM Cell Using Quantum Dot Cellular Automata
摘要
This paper presents the design and analysis of a Random Access Memory (RAM) cell using Quantum Dot Cellular Automata (QCA) technology. QCA offers a promising alternative to conventional transistor-based approaches, leveraging Coulombic interaction between cells for computation. The proposed RAM cell design incorporates QCA’s unique properties, such as majority logic gates and clocking to achieve high-speed operation, minimal power consumption, and fault tolerance. Through comprehensive analysis including power efficiency, fault tolerance, and polarization effects, the paper highlights the importance of optimizing RAM cell design parameters for reliable performance in QCA-based digital systems. The results show that the proposed RAM circuit is more efficient. An improvement of 17.80% in cell count, 17.78% in cost function and used the coplanar approach that reduced the complexity of the design over the other efficient RAM.