This chapter covers common sources of plasma and process damage during the manufacturing of CMOS chips. Almost every process step can cause damage. Accelerating mechanisms that increase the probability of damage are discussed, along with damage recovery mechanisms. The process steps capable of causing damage are covered, including ion implantation, wet processing, resist and masking, electron and ion beams, bond pad formation, plasma film deposition, sputtering, plasma etch, through-silicon vias, and light damage. The damage mechanisms and examples are discussed. Common plasma-related damage factors are discussed, including plasma ignition and extinction, wafer bevel and backside processing, electrostatic chucks, recipe transients, magnetic fields, and across-wafer nonuniformity.