The CMOS circuit configuration, layout, and design play a critical role in plasma and process damage. CMOS transistor junctions create a connection to the wafer substrate. These junctions can perform a beneficial role in protecting the chip from damage by shunting the current into the substrate and limiting damage. Inadvertent damage protection occurs due to unintentional normal chip design practices. Increased protection can be designed into the chip by placing circuit elements such as transistors and diodes in strategic locations to limit the damage, taking advantage of elevated temperatures and light exposure during processing. The wells and triple wells used in a CMOS process create additional damage mechanisms. Silicon-on-insulator (SOI) technology is very susceptible to damage because of the isolated silicon regions formed over an insulating substrate. The wordlines of memory devices such as DRAM or nonvolatile memories can also benefit from circuit protection. Metal–insulator–metal capacitors also can benefit from protection. This chapter covers the circuit techniques used to protect CMOS chips from damage.