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In this chapter, we covered the present understanding of the inherent physicalPhysical processes during the modification of the structuralStructural and electronic propertiesElectronic properties of the two ultra-hard materials, i.e., diamondDiamond and cubic boron nitrideCubic boron nitride (c-BN), using ion implantationIon implantation process. Both the c-BN and diamondDiamond are exceptionally indispensable materials owing to their extremely strong and metastableMetastable sp3 bondingBonding, very wide bandgap, and very high physicalPhysical and chemical inertnessChemical inertness. But the hardnessHardness of the c-BN and diamondDiamond crystalsCrystal makes them extremely unfavorable materials for diffusionDiffusion-dopingDoping for electronicElectronic and photonic applicationsPhotonic applications. Therefore, ion implantation in a controlled way can be the go-to choose for dopingDoping of c-BN and diamondDiamond and hence opening up the possibility of their usage as electronic materialsElectronic materials. Ion implantationIon implantation in c-BN or diamondDiamond-like films presents significant challenges due to their natural propensity to break sp3 bondsBond and transition into more stable sp2 bondsBond. This may leadLead to the non-dopingDoping related electrical propertiesElectrical properties in those ion-implanted materials. On the other hand, the formation of channel-like tracks can take place after the high-energyEnergy ion implantationIon implantation in c-BN and diamondDiamond, which increases the mobilityMobility of the atoms involved in the diffusionDiffusion process. This could create new opportunities for precise dopingDoping within localized regions by leveraging these tracks. In this chapter, we covered the generationGeneration of defectsDefect, formation of the tracks, and inhomogeneityInhomogeneity of the atom density through these two super hard crystalsCrystal during the ion implantationIon implantation process. Special attention is given to avoid the energetic ion-induced graphitization during the high-energyEnergy ion implantationIon implantation process of these sp3 bonded super hard and versatile materials.

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The Formation and Utilization of Defects and Tracks During the Ion Implantation of Diamond and c-BN Thin Films

  • 章节

  • 发表日期：

    2025年

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  • Ariful Haque

摘要

In this chapter, we covered the present understanding of the inherent physicalPhysical processes during the modification of the structuralStructural and electronic propertiesElectronic properties of the two ultra-hard materials, i.e., diamondDiamond and cubic boron nitrideCubic boron nitride (c-BN), using ion implantationIon implantation process. Both the c-BN and diamondDiamond are exceptionally indispensable materials owing to their extremely strong and metastableMetastable sp3 bondingBonding, very wide bandgap, and very high physicalPhysical and chemical inertnessChemical inertness. But the hardnessHardness of the c-BN and diamondDiamond crystalsCrystal makes them extremely unfavorable materials for diffusionDiffusion-dopingDoping for electronicElectronic and photonic applicationsPhotonic applications. Therefore, ion implantation in a controlled way can be the go-to choose for dopingDoping of c-BN and diamondDiamond and hence opening up the possibility of their usage as electronic materialsElectronic materials. Ion implantationIon implantation in c-BN or diamondDiamond-like films presents significant challenges due to their natural propensity to break sp3 bondsBond and transition into more stable sp2 bondsBond. This may leadLead to the non-dopingDoping related electrical propertiesElectrical properties in those ion-implanted materials. On the other hand, the formation of channel-like tracks can take place after the high-energyEnergy ion implantationIon implantation in c-BN and diamondDiamond, which increases the mobilityMobility of the atoms involved in the diffusionDiffusion process. This could create new opportunities for precise dopingDoping within localized regions by leveraging these tracks. In this chapter, we covered the generationGeneration of defectsDefect, formation of the tracks, and inhomogeneityInhomogeneity of the atom density through these two super hard crystalsCrystal during the ion implantationIon implantation process. Special attention is given to avoid the energetic ion-induced graphitization during the high-energyEnergy ion implantationIon implantation process of these sp3 bonded super hard and versatile materials.