Tuning the Electron Transport Properties of Nanotube Semiconductors
摘要
This chapter presents recent findings on the electricalElectrical transport behaviors of CNTCarbon Nanotube (CNT)-like nanotubesNanotube. We discuss methods to convert metallic nanotubesMetallic nanotubes into semiconductorsSemiconductor, such as atomic depressionAtomic depression in boron nanotubesBoron Nanotube (BNT) (BNTBoron Nanotube (BNT)) and rotationRotation of inner boron phosphideBoron Phosphide (BP) tube (BPBlack phosphorus (BP)) tubes in boron arsenide (BAs)Boron Arsenide (BAs)/BPBlack phosphorus (BP) heterojunctionsHeterojunction. We also explore ways to tune nanotubeNanotube properties through dopingDoping in black phosphorus nanotubesBlack phosphorus nanotubes and constructing heterojunctionsHeterojunction of ferromagneticFerromagnetic (FM) Fe2Si nanotubesNanotube and CNTsCarbon Nanotube (CNT). These treatments can leadLead to unique properties like negative differential resistance (NDR)Negative Differential Resistance (NDR) and ferromagnetism, with potentialPotential applicationsApplication in logic circuitsLogic circuits. The key message is that nanotubeNanotube electronic propertiesElectronic properties can be controlled by adjusting their diameterDiameter, chiralityChirality, dopingDoping, and heterojunctionsHeterojunction, enabling the design of CNTCarbon Nanotube (CNT)-like nanotubesNanotube with diverse electronicElectronic behaviors.