In-dopedIn-doped ZnS thin film ZnSThin film thin filmFilm was prepared by simplified two-electrodeElectrode electrochemical deposition technique. The solution 0.1M ZnSO4 (Zinc sulphate), 0.1M Na2S2O3 (Sodium thiosulphate) and 0.1M InCl3 (Indium Trichloride) were used as precursors for Zn, S, and Indium ions, respectively. The electrochemical behavior of Zn, S and Indium ions was studied by using cyclic voltammetry method. As per XRD pattern In-doped ZnS film was found to be zinc blende crystal structure. Effect of In-doping on dislocation density and microstrain has been investigated by XRD data. The optical band gap energy varied between 3.87 and 2.57 eV by increasing In-doping from 1 to 3%. Then optical band gap energy was found increases at increasing In-doping at 4%. The thin filmFilm sample ZnS: In (3%) has found highest transparency due to low refractive index at a wavelength of 785 nm in visible region. The electrical parameters such as resistivity, carrier concentration, mobility, hall coefficient were investigated by van der Pauw method of Hall effect measuring system at doping percentage.