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GaN HEMT devices (Cascode, p-GaN, GaN MISHEMT) have been found to exhibit poor (<0.5 μs) short-circuit withstand time at high DC bus voltages with normal on-state gate drive. The dramatic improvement in short-circuit withstand time that is achievable using the BaSIC topology is demonstrated in this chapter. The BaSIC topology was implemented using a gate-source shorted (GSS) and low voltage Si depletion mode MOSFET (DMM) in series with the source of the GaN transistors.

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BaSIC(DMM) for GaN HEMT

  • 章节

  • 发表日期：

    2025年

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  • B. Jayant Baliga,
  • Ajit Kanale

摘要

GaN HEMT devices (Cascode, p-GaN, GaN MISHEMT) have been found to exhibit poor (<0.5 μs) short-circuit withstand time at high DC bus voltages with normal on-state gate drive. The dramatic improvement in short-circuit withstand time that is achievable using the BaSIC topology is demonstrated in this chapter. The BaSIC topology was implemented using a gate-source shorted (GSS) and low voltage Si depletion mode MOSFET (DMM) in series with the source of the GaN transistors.