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A trade-off between short-circuit withstand time, on-state voltage drop, and switching losses is commonly performed by device manufacturers. Manufacturers now supply two types of IGBTs: (a) Type 1 devices with short-circuit withstand times exceeding 10 μs for motor drive applications and (b) Type 2 devices with smaller short-circuit withstand time but lower on-state voltage drop for resonant converter applications such as induction cooktops. In this chapter, the application of the BaSIC topology with a gate source shorted (GSS) and depletion mode Si low breakdown voltage power MOSFET (DMM) connected in series with the emitter of the IGBT device is investigated to improve the short-circuit withstand time for the Type 2 IGBTs. The approach is utilized for enhancing the performance of a commercially available Type 2 1.2 kV IGBT and a Type 2 1.7 kV IGBT.

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BaSIC(DMM) for Si IGBTs

  • 章节

  • 发表日期：

    2025年

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  • B. Jayant Baliga,
  • Ajit Kanale

摘要

A trade-off between short-circuit withstand time, on-state voltage drop, and switching losses is commonly performed by device manufacturers. Manufacturers now supply two types of IGBTs: (a) Type 1 devices with short-circuit withstand times exceeding 10 μs for motor drive applications and (b) Type 2 devices with smaller short-circuit withstand time but lower on-state voltage drop for resonant converter applications such as induction cooktops. In this chapter, the application of the BaSIC topology with a gate source shorted (GSS) and depletion mode Si low breakdown voltage power MOSFET (DMM) connected in series with the emitter of the IGBT device is investigated to improve the short-circuit withstand time for the Type 2 IGBTs. The approach is utilized for enhancing the performance of a commercially available Type 2 1.2 kV IGBT and a Type 2 1.7 kV IGBT.