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The BaSIC(EMM) approach was discussed in Chap. 10 for a 1.2 kV SiC power MOSFET. These results are compared with short-circuit ruggedness improvement achieved by using reduced gate drive voltage in this chapter. Trade-off curves between the short-circuit withstand time and the increase in on-resistance and switching energy loss achieved with the BaSIC(EMM) topology are contrasted with the gate drive voltage reduction approach.

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BaSIC(EMM) Topology Versus Gate Drive Voltage Reduction

  • 章节

  • 发表日期：

    2025年

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  • B. Jayant Baliga,
  • Ajit Kanale

摘要

The BaSIC(EMM) approach was discussed in Chap. 10 for a 1.2 kV SiC power MOSFET. These results are compared with short-circuit ruggedness improvement achieved by using reduced gate drive voltage in this chapter. Trade-off curves between the short-circuit withstand time and the increase in on-resistance and switching energy loss achieved with the BaSIC(EMM) topology are contrasted with the gate drive voltage reduction approach.