This chapter explores the pivotal role of Chemical Vapor Deposition (CVD) in semiconductor packaging, covering material deposition, surface modification, and barrier formation. It discusses fundamental CVD processes, including mechanisms and parameters governing film growth, and examines various techniques from traditional thermal CVD to emerging plasma-enhanced methods. Emphasis is placed on CVD’s contribution to depositing critical materials like dielectrics and metals, enabling high-performance interconnects and advanced packaging structures. Furthermore, recent advancements such as atomic layer deposition (ALD) and selective deposition techniques are reviewed for their potential in addressing current challenges and driving future innovations. Through comprehensive analysis, this chapter offers insights into the transformative impact of CVD on semiconductor packaging.