Optoelectronic Devices Based on pn-Junction Diodes
摘要
This chapter builds on the understanding of pn diodes developed in Chaps. 12 and 13 to analyze technologically important optoelectronic devices that rely on pn junctions. Examples of light-absorbing devices include photodetectors, fast photodiodes used in telecommunications, and single-photon detectors. An expansive section on solar cells introduces the reader to the spectral irradiance from the sun, basic concepts such as the current-voltage characteristic of photovoltaic cells under illumination, and different loss mechanisms that limit the power conversion efficiency of solar cells. This leads naturally to the so-called Shockley-Queisser limit, i.e., the ultimate (thermodynamic) limit to the power conversion efficiency of single-junction solar cells, along with examples of approaches for overcoming the Shockley-Queisser limit. The progress in efficiency of different photovoltaic technologies, ranging from monocrystalline silicon cells to hybrid inorganic-organic perovskites, is analyzed in relation to the Shockley-Queisser limit. The chapter concludes with an introduction to semiconductor light emitters, including light-emitting diodes (LEDs), devices for solid-state lighting, and diode lasers.