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This chapter builds on the basic properties of pn junctions, established in Chap. 12 , to analyze a first electronic device: the pn-junction diode. The concepts introduced in Chap. 12 are extended by considering pn junctions under applied bias, followed by a look at carrier transport mechanisms in biased diodes, which are analyzed both qualitatively and quantitatively. This culminates in the derivation of the current-voltage characteristic of an ideal pn diode, the so-called Shockley diode equation. Finally, we consider how real diodes deviate from the ideal behavior, both under reverse bias and under forward bias.

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The pn-Junction Diode: From Materials to Devices

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  • 发表日期：

    2025年

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  • Peter Sutter

摘要

This chapter builds on the basic properties of pn junctions, established in Chap. 12 , to analyze a first electronic device: the pn-junction diode. The concepts introduced in Chap. 12 are extended by considering pn junctions under applied bias, followed by a look at carrier transport mechanisms in biased diodes, which are analyzed both qualitatively and quantitatively. This culminates in the derivation of the current-voltage characteristic of an ideal pn diode, the so-called Shockley diode equation. Finally, we consider how real diodes deviate from the ideal behavior, both under reverse bias and under forward bias.