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In this chapter we present the results of the growth, characterization, and investigation of electrophysical and optoelectronic properties of InAs1−x−ySbxPy graded compositionGraded composition strain-induced conical and ellipsoidal quantum dotsConical and ellipsoidal quantum dots (QDs) and rings (QRs), quantum dot molecules (QDMs)Quantum Dot Molecules (QDMs) in the form of QD–leaves, as well as cooperative QD–leaves chains. Nucleation was performed on an InAs (100) substrate from the InAsSbP quaternary composition liquid phase in Stranski–Krastanow (S–K) growth modeStranski–Krastanow (S–K) growth mode, via steady-state liquid phase epitaxy (SSLPE)Steady-State Liquid Phase Epitaxy (SSLPE). The technological approach, growth features and conditions at the nanostructures’ shape architecture and nanoengineeringNanoengineering are presented and discussed. It is shown that the application of InAsSbP quaternary composition liquid phase with a certain concentration and resulting formation of an InAsSbP quaternary composition wetting layer allows not only for a more flexible and precise control of the lattice-mismatch between the wetting layer and an InAs (100) substrate as a main driving force in S–K growth mode, but also opens up new possibilities for nanoscale engineering and nanoarchitecture of several types of nanostructures. High-resolution scanning electron (HR-SEM), atomic-force (AFM) and transmission electron (TEM) microscopesScanning electron (HR-SEM), atomic-force (AFM) and transmission electron (TEM) microscopes were used for characterization. Optoelectronic properties of the grown nanostructures in the mid-infrared regionMid-infrared region are experimentally investigated by absorption and photoresponse spectraAbsorption and photoresponse spectra measurements. Electrophysical characteristics are explored by I–V, C–V and magnetoresistance (MR)Magnetoresistance (MR) measurements. Electronic properties of nanostructuresNanostructures with type-II band alignmentType-II band alignment are theoretically investigated using an eight-band k · p modelEight-band k·p model taking strain, built-in electrostatic potentials and the nanostructures size distribution into account. Calculations of hole ground-state energies and charge densities for a wide range of the nanostructures’ composition as close as possible to the systems observed in the experiments are performed. Two types of QDs-based mid-infrared photodetectorsMid-infrared photodetectors (photoconductive cells and diode heterostructures) arePhotoconductive cells and diode heterostructures fabricated and investigated.

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In(AsSbP) Graded Composition Quantum Dots, Quantum Rings and Quantum Dot Molecules

  • 章节

  • 发表日期：

    2025年

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  • Karen Gambaryan,
  • Oliver Marquardt,
  • Lilit Yeranyan,
  • Torsten Boeck

摘要

In this chapter we present the results of the growth, characterization, and investigation of electrophysical and optoelectronic properties of InAs1−x−ySbxPy graded compositionGraded composition strain-induced conical and ellipsoidal quantum dotsConical and ellipsoidal quantum dots (QDs) and rings (QRs), quantum dot molecules (QDMs)Quantum Dot Molecules (QDMs) in the form of QD–leaves, as well as cooperative QD–leaves chains. Nucleation was performed on an InAs (100) substrate from the InAsSbP quaternary composition liquid phase in Stranski–Krastanow (S–K) growth modeStranski–Krastanow (S–K) growth mode, via steady-state liquid phase epitaxy (SSLPE)Steady-State Liquid Phase Epitaxy (SSLPE). The technological approach, growth features and conditions at the nanostructures’ shape architecture and nanoengineeringNanoengineering are presented and discussed. It is shown that the application of InAsSbP quaternary composition liquid phase with a certain concentration and resulting formation of an InAsSbP quaternary composition wetting layer allows not only for a more flexible and precise control of the lattice-mismatch between the wetting layer and an InAs (100) substrate as a main driving force in S–K growth mode, but also opens up new possibilities for nanoscale engineering and nanoarchitecture of several types of nanostructures. High-resolution scanning electron (HR-SEM), atomic-force (AFM) and transmission electron (TEM) microscopesScanning electron (HR-SEM), atomic-force (AFM) and transmission electron (TEM) microscopes were used for characterization. Optoelectronic properties of the grown nanostructures in the mid-infrared regionMid-infrared region are experimentally investigated by absorption and photoresponse spectraAbsorption and photoresponse spectra measurements. Electrophysical characteristics are explored by I–V, C–V and magnetoresistance (MR)Magnetoresistance (MR) measurements. Electronic properties of nanostructuresNanostructures with type-II band alignmentType-II band alignment are theoretically investigated using an eight-band k · p modelEight-band k·p model taking strain, built-in electrostatic potentials and the nanostructures size distribution into account. Calculations of hole ground-state energies and charge densities for a wide range of the nanostructures’ composition as close as possible to the systems observed in the experiments are performed. Two types of QDs-based mid-infrared photodetectorsMid-infrared photodetectors (photoconductive cells and diode heterostructures) arePhotoconductive cells and diode heterostructures fabricated and investigated.