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Electrical over stress-induced power MOSFET degradation and its effects on DC–DC converters were examined in this chapter. Power MOSFETs experimentally operated above normal operating conditions and stress-induced changes in transistor parameters extracted. Switch-mode DC–DC converters are simulated to show degraded power MOSFET effects statistically and effects on converter parameters. This section describes a simple and prognostic electrical stress-induced mobility degradation model for MOS transistors. For this purpose, we performed electrical stress experiments on CoolMOS transistors which is a type of power MOSFETs. We determined the stress-induced changes in transistor parameters. We introduced a quantity Cr (mobility decreasing coefficient) which provides accurate model and predict the mobility degradation in time independently from effects of process or operational changes such as oxide thickness, substrate doping, and applied voltages on transistor.

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Power MOSFET Degradation and Statistical Investigation of the Degradation Effect on DC–DC Converters and Converter Parameters

  • 章节

  • 发表日期：

    2025年

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  • Hakan Kuntman,
  • Deniz Özenli,
  • Fırat Kaçar,
  • Yasin Özçelep

摘要

Electrical over stress-induced power MOSFET degradation and its effects on DC–DC converters were examined in this chapter. Power MOSFETs experimentally operated above normal operating conditions and stress-induced changes in transistor parameters extracted. Switch-mode DC–DC converters are simulated to show degraded power MOSFET effects statistically and effects on converter parameters. This section describes a simple and prognostic electrical stress-induced mobility degradation model for MOS transistors. For this purpose, we performed electrical stress experiments on CoolMOS transistors which is a type of power MOSFETs. We determined the stress-induced changes in transistor parameters. We introduced a quantity Cr (mobility decreasing coefficient) which provides accurate model and predict the mobility degradation in time independently from effects of process or operational changes such as oxide thickness, substrate doping, and applied voltages on transistor.