Scholarlink

This chapter describes the use of body biasing to provide gain controlgain-control in a low-noise amplifier (LNA). The use of the body node in CMOS or SOI technologies, as shown in Rashtian and Mirabbasi (2014, IEEE Trans Circuits Syst I Regul Pap 61(6):1638–1647. https://doi.org/10.1109/TCSI.2013.2290848 ), Zaini et al. (2017, A tunable Ultra Low Power inductorless Low Noise Amplifier exploiting body biasing of 28 nm FDSOI technology. In 2017 IEEE/ACM international symposium on low power electronics and design (ISLPED), pp 1–6. https://doi.org/10.1109/ISLPED.2017.8009161 ), Zandieh et al. (2021, IEEE Trans Microwave Theory Tech, 69(11), 4908–4924), and Artz et a. (2022, A fully-differential 146.6–157.4 GHz LNA utilizing back gate control to adjust gain in 22 nm FDSOI. In 2022 IEEE/MTT-S International Microwave Symposium—IMS 2022, pp 611–614), allows the bias voltage and thus the gain to be controlled in a passive way. By modulating the back gate, the bias operating point of the active device can be passively adjusted without interfering with the signal path. This can be advantageous for multistage millimeter wave (mmWmmW) circuits such as the D-band LNA prototype described, which operates at 150 GHz and achieves a controllable gain of 9–18 dB. For optimum noise and linearity performance at all gain settings, the stage design and device bias operating point must be carefully selected, as described in this chapter. S-parameters and a tuner-based noise figurenoise figure (NF) measurement in the D-bandD-band (110–170 GHz) are provided for validation.

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Variable Gain Control with Bulk Biasing in mmW Amplifier

  • 章节

  • 发表日期：

    2025年

查看全文
  • Patrick James Artz,
  • Friedel Gerfers

摘要

This chapter describes the use of body biasing to provide gain controlgain-control in a low-noise amplifier (LNA). The use of the body node in CMOS or SOI technologies, as shown in Rashtian and Mirabbasi (2014, IEEE Trans Circuits Syst I Regul Pap 61(6):1638–1647. https://doi.org/10.1109/TCSI.2013.2290848 ), Zaini et al. (2017, A tunable Ultra Low Power inductorless Low Noise Amplifier exploiting body biasing of 28 nm FDSOI technology. In 2017 IEEE/ACM international symposium on low power electronics and design (ISLPED), pp 1–6. https://doi.org/10.1109/ISLPED.2017.8009161 ), Zandieh et al. (2021, IEEE Trans Microwave Theory Tech, 69(11), 4908–4924), and Artz et a. (2022, A fully-differential 146.6–157.4 GHz LNA utilizing back gate control to adjust gain in 22 nm FDSOI. In 2022 IEEE/MTT-S International Microwave Symposium—IMS 2022, pp 611–614), allows the bias voltage and thus the gain to be controlled in a passive way. By modulating the back gate, the bias operating point of the active device can be passively adjusted without interfering with the signal path. This can be advantageous for multistage millimeter wave (mmWmmW) circuits such as the D-band LNA prototype described, which operates at 150 GHz and achieves a controllable gain of 9–18 dB. For optimum noise and linearity performance at all gain settings, the stage design and device bias operating point must be carefully selected, as described in this chapter. S-parameters and a tuner-based noise figurenoise figure (NF) measurement in the D-bandD-band (110–170 GHz) are provided for validation.