First-order resonantResonant Raman scattering Raman spectroscopyRaman spectroscopy inTransition metal dichalcogenides an external magnetic field is a powerful method that allows for exploring configurations of energy levels towards device applications of two-dimensional (2D) transition metal dichalcogenideTransition metal dichalcogenides (TMD) semiconductors. We have unveiled the behavior of the magneto-polaronMagneto-polarons (MP) resonances as a function of the phonon symmetry inherent in monolayer (MLMonolayer (ML)) TMDs. A large number of avoided crossing points of energy branches involving an optical phonon in the MP spectrum, superposition of the electron and hole states in the excitation branches, and their relationship with optical transitions in different scattering configurations are unique in these 2D structures2D structures. To analyze them, the MP resonant scattering in a MLMonolayer (ML) TMD is evaluated as a function of the laser energy and the magnetic field. The MP resonant Raman intensity exhibits three resonant splitting of double avoided-crossing levels. The three excitation branches are present in the MP spectrum due to the coupling of electrons and holes Landau levels through an out-of-plane \(A_{1}\) optical phonon mode. The energy gaps at the anti-crossing points in the MP Raman spectrum are found as a function of the electron and hole deformation potential constants. An explicit expression for the Raman scattering efficiency is reported, allowing for exploration of the relative electron and hole contributions to polaron formation in the magnetic field. The obtained results are a guideline for control over the MP effects in the magneto-optical properties of TMDs.

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Magneto-Polaron Effects on Resonant Raman Scattering in Transition Metal Dichalcogenides

  • Vladimir M. Fomin,
  • Darío G. Santiago-Pérez,
  • Dmitry V. Tkachenko,
  • Gilmar E. Marques,
  • Carlos Trallero-Giner

摘要

First-order resonantResonant Raman scattering Raman spectroscopyRaman spectroscopy inTransition metal dichalcogenides an external magnetic field is a powerful method that allows for exploring configurations of energy levels towards device applications of two-dimensional (2D) transition metal dichalcogenideTransition metal dichalcogenides (TMD) semiconductors. We have unveiled the behavior of the magneto-polaronMagneto-polarons (MP) resonances as a function of the phonon symmetry inherent in monolayer (MLMonolayer (ML)) TMDs. A large number of avoided crossing points of energy branches involving an optical phonon in the MP spectrum, superposition of the electron and hole states in the excitation branches, and their relationship with optical transitions in different scattering configurations are unique in these 2D structures2D structures. To analyze them, the MP resonant scattering in a MLMonolayer (ML) TMD is evaluated as a function of the laser energy and the magnetic field. The MP resonant Raman intensity exhibits three resonant splitting of double avoided-crossing levels. The three excitation branches are present in the MP spectrum due to the coupling of electrons and holes Landau levels through an out-of-plane \(A_{1}\) optical phonon mode. The energy gaps at the anti-crossing points in the MP Raman spectrum are found as a function of the electron and hole deformation potential constants. An explicit expression for the Raman scattering efficiency is reported, allowing for exploration of the relative electron and hole contributions to polaron formation in the magnetic field. The obtained results are a guideline for control over the MP effects in the magneto-optical properties of TMDs.