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Current levels of gallium nitride (GaN)-based high electron mobility transistor (HEMT) degrade during switching operation. This degradation arises due to increase in channel resistance in HEMTs, commonly referred to as current collapse, which hinders their application in power electronics. Several techniques and semiconductor technologies have been reported to subdue current collapse in HEMTs. This manuscript proposes a gate-shaped AlGaN/GaN HEMT (normally ON behavior), wherein the current collapse phenomenon is studied. The current collapse is observed to be 17% and 7% in conventional and gate-shaped (dr7) HEMTs, respectively. The observed results indicate suppression in current collapse in the gate-shaped HEMT because of the reduction in electric field, strain, and hot electron effects as compared to conventional HEMT.

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On the Mitigation of Current Collapse Phenomenon in Gate-Shaped AlGaN/GaN HEMTs

  • 会议论文

  • 发表日期：

    2025年

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  • Ashok Ray,
  • Pranjal Barman,
  • Sushanta Bordoloi

摘要

Current levels of gallium nitride (GaN)-based high electron mobility transistor (HEMT) degrade during switching operation. This degradation arises due to increase in channel resistance in HEMTs, commonly referred to as current collapse, which hinders their application in power electronics. Several techniques and semiconductor technologies have been reported to subdue current collapse in HEMTs. This manuscript proposes a gate-shaped AlGaN/GaN HEMT (normally ON behavior), wherein the current collapse phenomenon is studied. The current collapse is observed to be 17% and 7% in conventional and gate-shaped (dr7) HEMTs, respectively. The observed results indicate suppression in current collapse in the gate-shaped HEMT because of the reduction in electric field, strain, and hot electron effects as compared to conventional HEMT.