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In the present work, Chemical Solution Deposition technique has been employed for the fabrication of ZnO thin film based UV photo detector. Investigation of the structural, optical and electrical properties of ZnO thin films has been carried out to examine the performance of the device towards UV detection application. The switching characteristics of the device are measured with UV laser of wavelength 355 nm and maximum power of 120 mW with varying applied bias in the step of 0.5 V. The calculated values of the response and the recovery time are 3.14 s and 1.94 s at 1 V respectively. The dark current (Id) and photo response (K) values are found to be 4.26 × 10−9 A and 9.6 × 102 respectively. The results indicate the potential application of ZnO thin films for detection of UV radiations at low applied bias voltage.

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Investigation of Electrical and Optical Properties of Sol–Gel Derived ZnO Thin Films for UV Photo Detection Application

  • 会议论文

  • 发表日期：

    2025年

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  • Babita Sharma,
  • Reema Gupta,
  • Kajal Jindal,
  • Mallika Verma,
  • Arijit Chowdhuri,
  • Monika Tomar

摘要

In the present work, Chemical Solution Deposition technique has been employed for the fabrication of ZnO thin film based UV photo detector. Investigation of the structural, optical and electrical properties of ZnO thin films has been carried out to examine the performance of the device towards UV detection application. The switching characteristics of the device are measured with UV laser of wavelength 355 nm and maximum power of 120 mW with varying applied bias in the step of 0.5 V. The calculated values of the response and the recovery time are 3.14 s and 1.94 s at 1 V respectively. The dark current (Id) and photo response (K) values are found to be 4.26 × 10−9 A and 9.6 × 102 respectively. The results indicate the potential application of ZnO thin films for detection of UV radiations at low applied bias voltage.