Most of the modeling analysis of nanoscale various FET architectures for n-channel and p-channel FET that are configured on advanced channel length nodes below 7 nm, do not take into account precise determinations of various FET and material centric transport parameters that have been elucidated and computed in this Book by the author in the chapters.

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Conclusion and Future Remarks

  • Nabil Shovon Ashraf

摘要

Most of the modeling analysis of nanoscale various FET architectures for n-channel and p-channel FET that are configured on advanced channel length nodes below 7 nm, do not take into account precise determinations of various FET and material centric transport parameters that have been elucidated and computed in this Book by the author in the chapters.