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For gate-all-around (GAA) nanowire transistor, for improved gate to channel integrity and minimization of short channel effects (SCE), the nanowire diameter has to be reduced as amenable by the roadmap node up to 2–3 nm where later Chapter will show nanowire will be transformed to stacked nanosheet architecture with gate wrapped up around.

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Gate-All-Around (GAA) Nanowire n-FET Device Physics Based Performance Analysis

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  • 发表日期：

    2025年

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  • Nabil Shovon Ashraf

摘要

For gate-all-around (GAA) nanowire transistor, for improved gate to channel integrity and minimization of short channel effects (SCE), the nanowire diameter has to be reduced as amenable by the roadmap node up to 2–3 nm where later Chapter will show nanowire will be transformed to stacked nanosheet architecture with gate wrapped up around.