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Up until now, there is no analytical equation based modeling of density of states (DOS) effective mass computation for electron and hole in silicon for low temperatures down to cryogenic level such as 50 K and related actual ionization percentage calculation for phosphorous doped n-type silicon and boron doped p-type silicon at cryogenic temperatures in the range of 50 K.

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Some of the Very Integral Parameters Calculations for Silicon Down to Cryogenic Temperatures

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  • 发表日期：

    2025年

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  • Nabil Shovon Ashraf

摘要

Up until now, there is no analytical equation based modeling of density of states (DOS) effective mass computation for electron and hole in silicon for low temperatures down to cryogenic level such as 50 K and related actual ionization percentage calculation for phosphorous doped n-type silicon and boron doped p-type silicon at cryogenic temperatures in the range of 50 K.