Scholarlink

For n-FET fabricated on p-type silicon substrate with boron doping and p-FET fabricated on n-type silicon substrate with phosphorous doping, the drive current of the FET device depends on minority carrier mobility in n and p-FET and saturated drift velocity of minority channel carriers in n and p-FET.

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Band Non Parabolicity Introduced T = 300 K Key Doping Ionization Related and Carrier Transport Related Parameters Derivation

  • 章节

  • 发表日期：

    2025年

查看全文
  • Nabil Shovon Ashraf

摘要

For n-FET fabricated on p-type silicon substrate with boron doping and p-FET fabricated on n-type silicon substrate with phosphorous doping, the drive current of the FET device depends on minority carrier mobility in n and p-FET and saturated drift velocity of minority channel carriers in n and p-FET.