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This chapter describes the growth of thick (6–50 μm) GaN epitaxial layers by metal-organic chemical vapor deposition (MOCVD) on native GaN substrates. Wafers both with and without high-dislocation-density dot-cores were examined. The control of layer thickness, doping (including compensation), and defect formation is discussed. A variety of techniques have been used to characterize the epiwafers including capacitance-voltage (CV) profiling, Raman spectroscopy, and optical profilometry. The epitaxial structures were processed into pn diodes at both Sandia National Laboratories and the Naval Research Laboratory. Structures with 50 μm thick drift layers processed at Sandia showed breakdown voltage up to 6.4 kV, while the yield of 1.2-kV-class devices processed at NRL was correlated with epiwafer maps. This work provides the foundation for future vertical GaN power devices.

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MOCVD Growth of GaN Drift Layers on Bulk GaN Substrates for Power Electronic Devices

  • 章节

  • 发表日期：

    2025年

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  • Robert Kaplar,
  • Anthony Rice,
  • Luke Yates,
  • Andrew Binder,
  • Andrew M. Armstrong,
  • Andrew A. Allerman

摘要

This chapter describes the growth of thick (6–50 μm) GaN epitaxial layers by metal-organic chemical vapor deposition (MOCVD) on native GaN substrates. Wafers both with and without high-dislocation-density dot-cores were examined. The control of layer thickness, doping (including compensation), and defect formation is discussed. A variety of techniques have been used to characterize the epiwafers including capacitance-voltage (CV) profiling, Raman spectroscopy, and optical profilometry. The epitaxial structures were processed into pn diodes at both Sandia National Laboratories and the Naval Research Laboratory. Structures with 50 μm thick drift layers processed at Sandia showed breakdown voltage up to 6.4 kV, while the yield of 1.2-kV-class devices processed at NRL was correlated with epiwafer maps. This work provides the foundation for future vertical GaN power devices.