Scholarlink

This chapter provides a broad overview of the use of the Halide vapor phase epitaxy (HVPE) technique as well as its variants T-HVPE, OVPE, D-HVPE, QF-HVPE, and modified HVPE to prepare both bulk GaN crystals as well as III-N-based device epilayers. The chapter starts with a brief history and overview of the technique and its application to GaN, followed by a discussion on its use in the preparation of bulk GaN substrates including practical considerations for reactor design. Next, a discussion is presented on the use of HVPE as an overall epitaxial technique for GaN-based devices, particularly power electronics devices, and the chapter concludes with a brief discussion on emerging HVPE-adjacent techniques that have been proposed for bulk GaN and GaN-based epitaxy.

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Use of HVPE for Growth of Bulk GaN Wafers and GaN Epilayers for Power Electronics Applications

  • 章节

  • 发表日期：

    2025年

查看全文
  • Jacob H. Leach

摘要

This chapter provides a broad overview of the use of the Halide vapor phase epitaxy (HVPE) technique as well as its variants T-HVPE, OVPE, D-HVPE, QF-HVPE, and modified HVPE to prepare both bulk GaN crystals as well as III-N-based device epilayers. The chapter starts with a brief history and overview of the technique and its application to GaN, followed by a discussion on its use in the preparation of bulk GaN substrates including practical considerations for reactor design. Next, a discussion is presented on the use of HVPE as an overall epitaxial technique for GaN-based devices, particularly power electronics devices, and the chapter concludes with a brief discussion on emerging HVPE-adjacent techniques that have been proposed for bulk GaN and GaN-based epitaxy.