Epitaxially grown compound semiconductor materials, such as AlGaN/GaN, have complex layer structures with varying alloy composition and thin dopant layers which are often measured by SIMS. However, these are challenging to measure due to “matrix effects” from the complex multilayered structures. A SIMS method which minimizes these artifacts is important for obtaining reliable results throughout the structure of interest. PCOR-SIMSSM is a point-by-point data correction algorithm, which uses the alloy composition at a given data point for proper calibration of SIMS intensities. This minimizes matrix effects enabling measurement of layer thicknesses and elemental concentrations across graded compositions with much less error. Devices often have dopants and layers that are <10 nm thick, therefore the depth resolution of the SIMS profile must be sufficient to detect small variations in these layers. With the use of proper analytical conditions, layers as thin as 1 nm can be successfully analyzed to study small changes in growth conditions and the resultant film. However, even when sophisticated data acquisition and calibration methods are applied, physical defects can lead to artifacts in the SIMS data, causing incorrect evaluation or interpretation of the results. Additional characterizations may be necessary for a full and proper understanding of these films.