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To ensure reliable power transmission, maintaining high thermal stabilityThermal stability in aluminumAluminum conductor cablesConductor cables is essential, as strength degradation may occur due to the increased temperature of overhead cables during service. This study examined the strength degradation of an ultrafine-grained hypoeutectic Al-Si alloy by investigating its microstructural evolution during post-annealingAnnealing. The primary strengthening mechanisms in the Al-Si wire include strain hardening and grain boundary strengthening. This study revealed that microstructural changes were influenced by both the temperature and duration ofPost-annealing post-annealingAnnealing. At 90 °C, a slight strength reductionReduction occurred owing to defect recoveryRecovery, such as vacancies and dislocations. At 250 °C, grain growth and dislocation density reductionReduction contributed to strength degradation. These findings indicate that dislocation recoveryRecovery, recrystallizationRecrystallization, and grain growth are the main factors driving strength degradation in Al-Si wires.

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Effect of Post-annealing on Mechanical Properties and Microstructural Evolution of Ultrafine Grained Hypoeutectic Al-Si Conductor Wires

  • 会议论文

  • 发表日期：

    2025年

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  • Mohammad Khoshghadam-Pireyousefan,
  • Mousa Javidani,
  • Alexandre Maltais,
  • Julie Lévesque,
  • X.-Grant Chen

摘要

To ensure reliable power transmission, maintaining high thermal stabilityThermal stability in aluminumAluminum conductor cablesConductor cables is essential, as strength degradation may occur due to the increased temperature of overhead cables during service. This study examined the strength degradation of an ultrafine-grained hypoeutectic Al-Si alloy by investigating its microstructural evolution during post-annealingAnnealing. The primary strengthening mechanisms in the Al-Si wire include strain hardening and grain boundary strengthening. This study revealed that microstructural changes were influenced by both the temperature and duration ofPost-annealing post-annealingAnnealing. At 90 °C, a slight strength reductionReduction occurred owing to defect recoveryRecovery, such as vacancies and dislocations. At 250 °C, grain growth and dislocation density reductionReduction contributed to strength degradation. These findings indicate that dislocation recoveryRecovery, recrystallizationRecrystallization, and grain growth are the main factors driving strength degradation in Al-Si wires.