This chapter offers a detailed analysis of high-voltage silicon carbide (SiC) power module packaging. It begins with an overview of the fundamental structure and key components of power modules and the electrical, thermal, and reliability considerations. The chapter then provides a summary of the state-of-the-art high-voltage silicon and SiC power modules. Electrical insulation degradation mechanisms, such as partial discharge and electrical treeing, and their impact on the reliability of high-voltage power modules are then examined. The chapter then discusses geometric and materials strategies for mitigating high electric fields to prevent insulation degradation. Additionally, the chapter provides an overview of thermal management techniques, including advanced cold plates and double-side cooling methods, to enhance heat dissipation. The topics covered in this chapter offer a thorough understanding of the key considerations, challenges, approaches, and technologies in developing suitable packages for high-voltage SiC devices.